A new technique for finding sub-threshold current of MOSFETs

Author

Ahmed, Taufiq ; Hasan, Nazmul

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

fDate

18-19 May 2012

Firstpage

893

Lastpage

896

Abstract

A new technique for finding sub-threshold current of MOSFETs is proposed. In this approach, first 1-D Poisson´s equation for potential within the depletion region formed beneath the SiO₂-Si interface is solved. The solution gives potential as a function of the distance along the width the of the depletion region. The intersection of the tangent of the potential curve at the interface with the distance axis gives the effective thickness of the channel. The new effective channel thickness is applied for finding new expression of sub-threshold current. The result of this model is compared with previous models and found smaller sub-threshold current.

Keywords

MOSFET; Poisson equation; elemental semiconductors; silicon; silicon compounds; MOSFET; SiO₂-Si; channel effective thickness; depletion region; first one dimensional Poisson equation; sub-threshold current; Logic gates; MOSFETs; Physics; Substrates; effective channel thickness; electrostatic potential; space charge density; sub-threshold current; surface potential;

fLanguage

English

Publisher

ieee

Conference_Titel

Informatics, Electronics & Vision (ICIEV), 2012 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1153-3

Type

conf

DOI

10.1109/ICIEV.2012.6317351

Filename

6317351