Title :
A compact analytical model of band-to-band tunneling in a nanoscale p-i-n diode
Author :
Ahmed, Kawser ; Elahi, Mirza Mohammad Monzure ; Islam, Md Shofiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
A semiclassical model of band-to-band tunneling current in a reverse biased silicon p-i-n diode is presented in this paper. Due to the absence of a simple analytical model for the nanoscale reverse biased p-i-n diode, the working principle is generally not well understood. Using Kane´s model, an analytical expression for the current through the nanoscale p-i-n diode in reverse bias is derived. Device simulation has been performed using SILVACO ATLAS. The obtained analytical expressions are compared with results from the simulator and good agreement at different reverse voltages is found.
Keywords :
nanoelectronics; p-i-n diodes; semiconductor device models; Kane model; SILVACO ATLAS; Si; band-to-band tunneling current; compact analytical model; nanoscale p-i-n diode; reverse biased silicon p-i-n diode; semiclassical model; Band to band tunneling; Kane´s model; generation current; reverse saturaion current; tunneling path;
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1153-3
DOI :
10.1109/ICIEV.2012.6317361
