High efficiency Si integrated micro-transformers using stacked copper windings for power conversion applications

Author

Wang, Ningning ; Kulkarni, Santosh ; Jamieson, Brice ; Rohan, James ; Casey, Declan ; Roy, Saibal ; O´Mathuna, Cian

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

411

Lastpage

416

Abstract

This paper details the design, fabrication, and characterization of silicon integrated micro-transformers. Two types of race-track shaped micro-transformers, single copper winding or single layer metal (SLM) and double copper winding or double layer metal (DLM) were designed and fabricated using standard CMOS processing. The DLM devices have higher inductance density than SLM devices realized within similar footprint area. The design study showed that the efficiency of micro-transformers increased from 37% for SLM designs to over 75% for DLM transformers at 20 MHz.

Keywords

CMOS integrated circuits; copper; elemental semiconductors; microfabrication; micromechanical devices; power transformers; silicon; windings; Cu; Si; double copper winding; double layer metal; power conversion application; race-track shaped microtransformers; silicon integrated microtransformers; single copper winding; single layer metal; stacked copper windings; standard CMOS processing; Conductors; Copper; Inductance; Magnetic cores; Magnetic losses; Resistance; Windings;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6165852

Filename

6165852