DocumentCode :
3508578
Title :
Sinter-attach of high-temperature sensors for deep-drilling monitoring
Author :
Kahler, J. ; Stranz, Andrej ; Peiner, Erwin ; Waag, Andreas
Author_Institution :
Inst. of Semicond. Technol., Tech. Univ. Braunschweig, Braunschweig, Germany
fYear :
2012
fDate :
13-16 Aug. 2012
Firstpage :
1594
Lastpage :
1599
Abstract :
An optimized fabrication process for high-temperature piezoresistive vibration sensors made of p-doped double-layer SOI material is described. Thus, an easy and straightforward production of very precise sensor geometries is now feasible. Subsequently, it is demonstrated that sintering of silver particles can be successfully applied for die attach of these MEMS sensors. Sintering takes place at a very low pressure of 4 N/mm2 and a temperature of 250 °C for 2 min. Furthermore, the attached sensors are tested according to the requirements of deep drilling projects such as geothermal power generation from deep geologic layers. In doing so, the operation of the bonded sensors under realistic conditions for vibration monitoring is analyzed, i.e. simultaneous temperature (250 °C) and vibration (± 50 g) stress.
Keywords :
micromechanical devices; piezoresistive devices; silicon-on-insulator; sintering; temperature sensors; vibrations; MEMS sensor; deep geologic layer; deep-drilling monitoring; die attach; geothermal power generation; high-temperature sensor; optimized fabrication process; p-doped double-layer SOI; piezoresistive vibration sensor; silver particle; sintering; temperature 250 C; temperature stress; time 2 min; vibration monitoring; vibration stress; Abstracts; Diamonds; Lead; Neck; Substrates; Vibrations; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
Type :
conf
DOI :
10.1109/ICEPT-HDP.2012.6474912
Filename :
6474912
Link To Document :
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