DocumentCode
3508686
Title
Molecular dynamics investigation on temperature-dependent thermal expansion and elastic properties of gallium nitride nanorods
Author
Han Yan ; Zhiyin Gan ; Sheng Liu
Author_Institution
State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2012
fDate
13-16 Aug. 2012
Firstpage
1617
Lastpage
1619
Abstract
The coefficients of thermal expansion (CTE) properties of gallium nitride nanorod with various temperatures were studied by using molecular dynamics methods. The influence of the mechanical pressure loading on the axial CTE was also extensively explored. The results indicate that the axial coefficients of thermal expansion increases with increasing temperatures, and decreases with increasing mechanical pressure loading. Besides, the axial CTE varies nonlinearly with the temperature. The curve becomes gradual as the temperature increases, indicating that the nanorod expands more slowly at higher temperature. Our theoretical results demonstrate that, the external mechanical loading decreases the thermal performance of gallium nitride nanorod.
Keywords
III-V semiconductors; elasticity; gallium compounds; molecular dynamics method; nanorods; thermal expansion; wide band gap semiconductors; GaN; axial CTE properties; coefficients of thermal expansion properties; elastic properties; mechanical pressure loading; molecular dynamics methods; nanorods; temperature-dependent thermal expansion; thermal expansion axial coefficients; thermal performance; Abstracts; Continuous wavelet transforms; Light emitting diodes; Loading; Nanoscale devices; Reliability; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4673-1682-8
Electronic_ISBN
978-1-4673-1680-4
Type
conf
DOI
10.1109/ICEPT-HDP.2012.6474917
Filename
6474917
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