Direct robust active bonding between Al heat sink and Si substrate

Author

Tsao, L.C. ; Chang, S.Y. ; Huang, Ming-Shi ; Chen, Christopher S.

Author_Institution

Grad. Inst. of Mater. Eng., Nat. Pingtung Univ. of Sci. & Technol., Pingtung, Taiwan

fYear

2012

fDate

13-16 Aug. 2012

Firstpage

1635

Lastpage

1638

Abstract

In the study, the direct robust active bonding (DRAB) between Si chip and Al heat sink by using of low melting point Sn-Ag-Ti (SAT) active solder is obtained at 250°C in air. The bonding process was done without flux and without the need for pre-metallization of Al heat sink or a protective atmosphere. The bonded joints were studied using SEM and the distribution of elements using energy-dispersive x-ray (EDX) analysis. The results revealed that SAT active solder Si could be directly bonded with Si and Al, and the bonding strength of Si/Al bonding was 7.9 ±1.1MPa. A new Sn-Ag-Al phase has been formed at the solder/Al interfaces around. Such direct robust active bonding could be useful for 3D-chip and high powder CPU packaging.

Keywords

X-ray chemical analysis; aluminium; bonding processes; heat sinks; scanning electron microscopy; silicon; silver alloys; solders; tin alloys; titanium alloys; 3D-chip packaging; DRAB; EDX analysis; SAT active solder; SEM; Si; direct robust active bonding process; energy-dispersive X-ray analysis; heat sink premetallization; high powder CPU packaging; low melting point active solder; Joints; Robustness; Substrates; Surface cracks; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4673-1682-8

Electronic_ISBN

978-1-4673-1680-4

Type

conf

DOI

10.1109/ICEPT-HDP.2012.6474921

Filename

6474921