Design and fabrication of GaAs MMIC high power amplifier for KT IMT-2000 handset

Author

Nam, Jung Myung ; Ho, Jang Won ; Rea, Chung Myung ; Hyun, Lee Yun

Author_Institution

Lab. of Access Network, Korea Telecom, Seoul, South Korea

Volume

1

fYear

1999

fDate

1999

Firstpage

561

Abstract

A GaAs power amplifier MMIC for an IMT-2000 handset is designed, fabricated and analyzed. The power amplifier, which is of A-class, has 4 times the bandwidth in the RF range (1955 ±70 MHz), a 570 mW output power, a 41% power added efficiency, -15~-20 dB reflection coefficient, a 0.5 dB gain flatness in the operating frequency, and an input & output VSWR below 1.3 is realized

Keywords

III-V semiconductors; MMIC power amplifiers; field effect integrated circuits; gallium arsenide; power integrated circuits; telephone sets; 1885 to 2025 MHz; 41 percent; 570 mW; III V semiconductor; KT IMT-2000 handset; MMIC high power amplifier; RF range; bandwidth; class-A power amplifier; gain flatness; input VSWR; output VSWR; output power; parallel connected FET amplifier; power added efficiency; power amplifier design; power amplifier fabrication; reflection coefficient; Bandwidth; Fabrication; Gallium arsenide; High power amplifiers; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 99. Proceedings of the IEEE Region 10 Conference

Conference_Location

Cheju Island

Print_ISBN

0-7803-5739-6

Type

conf

DOI

10.1109/TENCON.1999.818476

Filename

818476