Title :
Investigations on double-diffused MOS (DMOS) transistors under ESD zap conditions
Author :
Boselli, Gianluca ; Meeuwsen, Stan ; Mouthaan, Ton ; Kuper, Fred
Author_Institution :
Dept. of Electr. Eng., Twente Univ., Enschede, Netherlands
Abstract :
In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism.
Keywords :
MOSFET; electrical contacts; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; semiconductor device testing; 2D simulations; DMOS transistor; DMOS transistors; ESD zap conditions; double-diffused MOS transistors; drain contact; drift diffusion region; failure mechanism; p-diffusion region; parasitic bipolar structure switch-on; reverse voltage; Analytical models; Bipolar integrated circuits; Breakdown voltage; Electrostatic discharge; Failure analysis; Low voltage; MOSFETs; Power dissipation; Power integrated circuits; Resistors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-58637-007-X
DOI :
10.1109/EOSESD.1999.818984
