Title :
Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology
Author :
Gossner, Harald ; Müller-Lynch, T. ; Esmark, K. ; Stecher, M.
Author_Institution :
Infineon Technol., Germany
Abstract :
Highly efficient ESD protection structures with a sustaining voltage >40 V are realized in a smart power technology. They guarantee excellent ESD protection at high voltage pins without the danger of transient latch-up. Compared to the vertical n-p-n transistor, a shift of the sustaining voltage of 20 V has been achieved purely by layout modification of the buried layer. The high ESD performance has been proven at product level by an ESD hardness of >8 kV (HBM).
Keywords :
buried layers; electrostatic discharge; integrated circuit layout; integrated circuit reliability; integrated circuit testing; power integrated circuits; protection; voltage control; 40 V; 8 kV; ESD performance; ESD protection; ESD protection elements; ESD protection structures; HBM ESD hardness; buried layer layout modification; high voltage pins; product level ESD hardness; smart power technology; sustaining voltage; sustaining voltage range control; transient latch-up; vertical n-p-n transistor; CMOS technology; Electrostatic discharge; Infrared detectors; Laser beams; Paper technology; Protection; Tellurium; Temperature; Testing; Voltage control;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1999
Conference_Location :
Orlando, FL, USA
Print_ISBN :
1-58637-007-X
DOI :
10.1109/EOSESD.1999.818985
