Reliability of IGBT in a STATCOM for harmonic compensation and power factor correction

Author

Reddy, Lakshmi Gopi ; Tolbert, Leon M. ; Ozpineci, Burak ; Xu, Yan ; Rizy, D. Tom

Author_Institution

Dept. of Electr. Eng. & Comp. Sci., Univ. of Tennessee, Knoxville, TN, USA

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

783

Lastpage

788

Abstract

With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.

Keywords

insulated gate bipolar transistors; power bipolar transistors; power factor correction; power semiconductor devices; power system reliability; semiconductor device reliability; smart power grids; static VAr compensators; IGBT; STATCOM; harmonic compensation; power factor correction; power semiconductors reliability; power system reliability; smart grid integration; Harmonic analysis; Insulated gate bipolar transistors; Inverters; Power system harmonics; Power system reliability; Reliability; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6165908

Filename

6165908