Insulation protection of high-power GaAs photoconductive switch

Author

Wei, Shi ; Zhenxian, Liang ; Jun, Feng ; Chuanxiang, Xu

Author_Institution

Inst. of Electr. Insulation, Xi´´an Jiaotong Univ., China

Volume

2

fYear

1997

fDate

25 -30 May 1997

Firstpage

927

Abstract

An all-solid insulation technique for surface protection of high-voltage lateral GaAs photoconductive switch has been reported in this paper. Multilayer transparent dielectrics as passivation and insulation protection materials are deposited and coated on the surface of the GaAs switch. Optimal geometry of the planar ohmic contacts was calculated. The ideal dark I-V characteristics of fabricated devices was observed. The hold-off field strength reaches 35 kv/cm

Keywords

III-V semiconductors; characteristics measurement; dielectric thin films; gallium arsenide; ohmic contacts; passivation; photoconducting switches; protective coatings; GaAs; all-solid insulation technique; dark I-V characteristic; high-voltage lateral photoconductive switch; hold-off field strength; insulation protection materials; multilayer transparent dielectrics; passivation; planar ohmic contacts; surface protection; Dielectric materials; Dielectrics and electrical insulation; Gallium arsenide; Geometry; Nonhomogeneous media; Passivation; Photoconducting materials; Photoconductivity; Protection; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-2651-2

Type

conf

DOI

10.1109/ICPADM.1997.616591

Filename

616591