DocumentCode
3510361
Title
Degradation Assessment of Power Semiconductors Applied in Static VAr Compensator
Author
Calazans, A. ; da Silva, L.E.B. ; Lambert-Torres, G. ; da Silva, V.F.
Author_Institution
Chesf-Companhia Hidro Eletrica do Sao Francisco
fYear
2006
fDate
15-18 Aug. 2006
Firstpage
1
Lastpage
6
Abstract
This paper presents a methodology for degradation assessment of power semiconductors, applied in static VAr compensators (SVC) of the types thyristor switched capacitor (TSC) and thyristor controlled reactor (TCR), that it aims at the improvement of the operational performance of these equipment. The methodology allows the identification of defective semiconductors, and the preventive substitution of these components, in order to prevent that the same ones come to fail in service, causing operational perturbations to the electrical system. The methodology defines the parameters of the semiconductors that can be used for the evaluation of the degradation. The conclusions are based on tests carried on semiconductors, with different states of degradation, from static compensators installed in the system of transmission of CHESF-Companhia Hidro Eletrica do Sao Francisco
Keywords
installation; maintenance engineering; power semiconductor devices; static VAr compensators; thyristor applications; transmission networks; CHESF-Companhia Hidro Eletrica do Sao Francisco; SVC; defective semiconductors identification; degradation assessment; power semiconductors; preventive substitution; static VAr compensator; thyristor controlled reactor; thyristor switched capacitor; transmission system; Availability; Capacitors; Degradation; Inductors; Power semiconductor switches; Semiconductor device testing; Static VAr compensators; Substations; Thyristors; Valves; Availability; Compensator; Defect; Degradation; Diode; Failure; SVC; Semiconductors; Test; Thyristor; temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Transmission & Distribution Conference and Exposition: Latin America, 2006. TDC '06. IEEE/PES
Conference_Location
Caracas
Print_ISBN
1-4244-0287-5
Electronic_ISBN
1-4244-0288-3
Type
conf
DOI
10.1109/TDCLA.2006.311559
Filename
4104490
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