Title :
Mechanisms of anodic bonding of silicon to pyrex glass
Author :
Albaugh, K.B. ; Cade, P.E. ; Rasmussen, D.H.
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
Abstract :
The mechanisms of formation of anodic bonds between glasses and metals are examined. The process is found to be an electrochemical analog to thermal glass-to-metal seals, where the metal surface is oxidized into the glass due to the development of large electric fields across the anodic depletion layer. The current vs. time transient at constant voltage contains a significant amount of information regarding the process mechanisms, which are predominantly electrochemical.<>
Keywords :
elemental semiconductors; glass; glass-metal seals; joining processes; semiconductor technology; semiconductor-insulator boundaries; silicon; anodic bonding; electrochemical mechanism; pyrex glass; semiconductor insulator boundaries; semiconductor technology; thermal glass-to-metal seals; transient; Area measurement; Bonding forces; Current measurement; Electrostatics; Glass; Seals; Silicon; Temperature; Voltage; Wafer bonding;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
DOI :
10.1109/SOLSEN.1988.26450
