DocumentCode
3510446
Title
Microwave analysis of a MEMS switch
Author
Asaduzzaman, Md ; Rahman, Md Shoaibur
Author_Institution
Dept. Electr. Eng. & Electron. Eng., Ahsanullah Univ. of Sci. & Technol., Dhaka, Bangladesh
fYear
2012
fDate
18-19 May 2012
Firstpage
1050
Lastpage
1053
Abstract
This paper demonstrates Radio Frequency (RF) performances of a proposed and designed two hot arms actuator MEMS switch. The switch is designed and simulated using CST Microwave Studio. AWR Microwave Office has been used to obtain different parameters of transmission line. The simulated results show that the designed MEMS switch performs well at high frequency. At OFF state the return loss S11 drops nearly to zero dB and the isolation S21 become lower than -50 dB at 1 GHz and -35 dB at 10 GHz which indicates the high isolation. At ON state position the simulation exhibits very low insertion loss, S21 <; -0.16 dB at 10 GHz and return loss S11 <;-19 dB at 10 GHz. Even at more high frequency insertion loss is very low as S21 <; -0.22 dB and return loss S11 <; -18 dB at 39.5 GHz.
Keywords
microactuators; microswitches; AWR Microwave Office; CST Microwave Studio; MEMS switch; OFF state; frequency 10 GHz; frequency 39.5 GHz; hot arms actuator; insertion loss; microwave analysis; radio frequency performances; return loss; transmission line; Mechanical factors; Micromechanical devices; Microwave FET integrated circuits; Microwave integrated circuits; Radio frequency; Reliability; Switches; Actuators; Insertion loss; Isolation; MEMS; RF;
fLanguage
English
Publisher
ieee
Conference_Titel
Informatics, Electronics & Vision (ICIEV), 2012 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4673-1153-3
Type
conf
DOI
10.1109/ICIEV.2012.6317475
Filename
6317475
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