Title :
An optimized frequency of dielectric barrier discharge analyzed by difference of voltage and current
Author :
Kim, S.G. ; Choe, H.H. ; Bong-Chul Jang ; Yun-Hwan Kim ; Gon-Ho Kim ; Kim, D.Y. ; Karunagaran, B. ; Junsin Yi
Author_Institution :
R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea
Abstract :
Summary form only given. In this paper, we configured the open type DBD (dielectric barrier discharge) system. Discharge character was remained as a stable feature and its properties were successfully investigated. Power absorption was measured as product of voltage and current as a function of frequency under open-air atmosphere. We observed the existence of an optimum frequency for power absorption. It is suggested that the optimum frequency occurs because the phase difference between voltage and current decreases as frequency increases. Helium addition to O/sub 2/-discharge under open-air condition shows OES intensity changes as He flow rate. This means that generation rate of radical may change according to the gas species although inert gas is added. Physical meaning of the area of current and voltage trajectory on 1-V plain is supposed to reactive part. To increase the power efficiency, we should reduce the area, i.e. the phase difference of voltage and current. Contact angle is measured on PR (photoresist) surface after some treatment conditions. Helium addition on the main O/sub 2/-discharge results in the increase of contact angle. It means that the He addition changes the radicals generated from oxygen and affects the surface of PR.
Keywords :
contact angle; discharges (electric); helium; oxygen; photoresists; plasma-wall interactions; surface treatment; He; He flow rate; O/sub 2/; O/sub 2/ discharge; contact angle; dielectric barrier discharge; helium; open-air atmosphere; phase difference; photoresist; power absorption; surface treatment; Absorption; Atmosphere; Atmospheric measurements; Current measurement; Dielectric measurements; Frequency measurement; Helium; Power measurement; Surface treatment; Voltage;
Conference_Titel :
Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-8334-6
DOI :
10.1109/PLASMA.2004.1340163