Title :
Recent advances in Si/SiGe HBT research
Author :
Schwierz, Frank ; Rossberg, Michael ; Forster, Hendrik ; Nuernbergk, Dirk ; Schipanski, Dagmar
Author_Institution :
Fachgebeit Festkorperelektronik, Tech. Univ. Ilmenau, Germany
Abstract :
Recent developments and advances in high speed silicon germanium heterojunction bipolar transistor (Si/SiGe HBT) research are reviewed. Special emphasis is laid on the Si/SiGe HBT activities in Germany. The paper describes the basic design of the Si/SiGe HBT and its advantages over conventional Si BJTs. A survey on the high frequency properties of Si/SiGe HBTs is given, outstanding experimental results are highlighted, and possible applications of these transistors are discussed. Recent results from the authors laboratory concerning the simulation and design of Si/SiGe HBTs are presented
Keywords :
Ge-Si alloys; UHF bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; silicon; HBT; Si-SiGe; UHF transistors; device simulation; high frequency properties; semiconductor device noise; semiconductor materials; switching times; Communication switching; Data processing; Doping; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor devices; Silicon germanium; Temperature;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566292
