• DocumentCode
    3511113
  • Title

    Porous silicon ethanol vapor sensor

  • Author

    Bow, Y.C. ; Kwok, W.M. ; Poon, M.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
  • fYear
    1996
  • fDate
    35245
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    A novel very-large-scale-integrable porous Si based ethanol vapor sensor will be presented. It has simple structure, high sensitivity, fast and stable response for ethanol vapor sensing at room environment. To explain the sensor results, a model based on the interaction of adsorbed ethanol molecules and the porous Si layer will also be proposed
  • Keywords
    elemental semiconductors; gas sensors; organic compounds; porous materials; semiconductor technology; silicon; I-V characteristics; Si; ethanol vapor sensor; porous silicon; sensor fabrication; sensor response; Chemical sensors; Chemical technology; Diodes; Ethanol; Fabrication; Gases; Passivation; Sensor phenomena and characterization; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996., IEEE Hong Kong
  • Print_ISBN
    0-7803-3091-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1996.566295
  • Filename
    566295