DocumentCode
3511290
Title
HF wet etching of oxide after ion implantation
Author
Liu, Lianjun ; Pey, KL ; Foo, Pangdow
Author_Institution
Inst. of Microelectron., Singapore
fYear
1996
fDate
35245
Firstpage
17
Lastpage
20
Abstract
Experimental study of wet etching of oxide in diluted HF solution is presented for different ion implantation dosage and energy. This wet etching is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the etching rate of oxide is a strong function of ion implantation dosage and energy. The oxide wet etch rate can be restored to non-implanted oxide etch rate after 30 min anneal at 700°C. The increase of etch rate after ion implantation is attributed to the breakage of Si-O bonds
Keywords
VLSI; annealing; etching; integrated circuit technology; ion implantation; silicon compounds; surface cleaning; 700 C; HF; SiO2; VLSI processing; annealing; dilute HF solution; ion implantation; oxide; wafer cleaning; wet etching; Chemicals; Hafnium; Ion implantation; Plasma measurements; Resists; Scanning probe microscopy; Silicon; Surface cleaning; Very large scale integration; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN
0-7803-3091-9
Type
conf
DOI
10.1109/HKEDM.1996.566296
Filename
566296
Link To Document