Title :
HF wet etching of oxide after ion implantation
Author :
Liu, Lianjun ; Pey, KL ; Foo, Pangdow
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
Experimental study of wet etching of oxide in diluted HF solution is presented for different ion implantation dosage and energy. This wet etching is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the etching rate of oxide is a strong function of ion implantation dosage and energy. The oxide wet etch rate can be restored to non-implanted oxide etch rate after 30 min anneal at 700°C. The increase of etch rate after ion implantation is attributed to the breakage of Si-O bonds
Keywords :
VLSI; annealing; etching; integrated circuit technology; ion implantation; silicon compounds; surface cleaning; 700 C; HF; SiO2; VLSI processing; annealing; dilute HF solution; ion implantation; oxide; wafer cleaning; wet etching; Chemicals; Hafnium; Ion implantation; Plasma measurements; Resists; Scanning probe microscopy; Silicon; Surface cleaning; Very large scale integration; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566296
