High-performance silicon MMIC interconnect for millimeter wave wireless communication

Author

Kim, Juno ; Qian, Yongxi ; Feng, Guojin ; Ma, Pingxi ; Chang, M. Frank ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1999

fDate

1999

Firstpage

235

Lastpage

238

Abstract

This paper presents the authors´ latest efforts to develop high performance interconnects for mixed signal silicon MMICs in the millimeter wave regime. The proposed silicon/metal/polyimide (SIMPOL) interconnect is extremely effective in reducing the crosstalk noise with low insertion loss. Measured results of a prototype test wafer demonstrate 0.33 dB/mm insertion loss at 30 GHz, and excellent noise isolation comparable to background noise over the entire frequency range up to 50 GHz

Keywords

MIMIC; MMIC; crosstalk; dielectric thin films; elemental semiconductors; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated circuit noise; integrated circuit testing; losses; mixed analogue-digital integrated circuits; polymer films; silicon; 30 to 50 GHz; SIMPOL interconnect; Si; background noise; crosstalk noise; frequency range; insertion loss; interconnects; millimeter wave regime; millimeter wave wireless communication; mixed signal silicon MMICs; noise isolation; prototype test wafer; silicon MMIC interconnect; silicon/metal/polyimide interconnect; Background noise; Crosstalk; Frequency measurement; Insertion loss; Loss measurement; MMICs; Millimeter wave measurements; Noise measurement; Polyimides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 1999

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5597-0

Type

conf

DOI

10.1109/EPEP.1999.819233

Filename

819233