Green laser annealing with light absorber

Author

Shibahara, Kentaro ; Matsuno, Akira ; Takii, Eisuke ; Eto, Takanori

Author_Institution

Res. Center for Nanodevices & Syst., Hiroshima Univ.

fYear

2005

fDate

4-7 Oct. 2005

Abstract

To compensate deep penetration depth of green laser light into Si, metal absorber was formed on a specimen. TiN absorber was effective to reduce necessary laser energy density to activate dopant, however Mo worked oppositely. In addition, specimens with the absorber encountered the problem of over-melt that increased junction depth severely. Mechanisms of these results were discussed utilizing one-dimensional thermal diffusion analysis. Absence of reflectivity reduction was considered to be the key of this phenomenon

Keywords

MOSFET; elemental semiconductors; laser beam annealing; melting; molybdenum; rapid thermal annealing; reflectivity; silicon; thermal conductivity; thermal diffusion; titanium compounds; MOSFET; Si-Mo; Si-TiN; dopant activation; green laser annealing; junction depth; laser energy density; light absorber; metal absorber; one-dimensional thermal diffusion analysis; over melting; penetration depth; rapid thermal annealing; Annealing; Laser transitions; Mass production; Optical pulses; Poles and towers; Power lasers; Silicon; Solid lasers; Thermal conductivity; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9223-X

Type

conf

DOI

10.1109/RTP.2005.1613689

Filename

1613689