SiON gate dielectric formation by rapid thermal oxidation of nitrided Si

Author

Everaert, J.-L. ; Conard, T. ; Schaekers, M.

Author_Institution

IMEC, Leuven

fYear

2005

fDate

4-7 Oct. 2005

Abstract

SiON gate dielectric is optimized for general purpose 65 nm node applications by using a first nitridation approach. A process parameter screening is done where the resulting SiON films are analyzed by angle resolved XPS and non-contact probing by Quantox. Good correlation between XPS and Quantox results are found. We demonstrate also correlation between Quantox results and transistor performance. It shows that the first nitridation approach is promising for reducing gate leakage resulting in better off-state current

Keywords

CMOS integrated circuits; MOSFET; X-ray photoelectron spectra; dielectric thin films; interface states; nitridation; oxidation; plasma materials processing; rapid thermal processing; silicon compounds; 65 nm; 65 nm node; CMOS; KLA-Tencor Quantox; NMOS transistor; Si:B; SiON; angle resolved XPS; boron doping; dielectric film; equivalent oxide thickness; gate dielectric; gate leakage; interface trap density; noncontact electrical characterization; off-state current; p-type Si(100) wafer; plasma decoupled plasma nitridation; rapid thermal nitridation; rapid thermal oxidation; silicon oxynitride; Dielectric measurements; Gate leakage; Leakage current; Oxidation; Plasma density; Plasma materials processing; Plasma measurements; Plasma temperature; Rapid thermal processing; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9223-X

Type

conf

DOI

10.1109/RTP.2005.1613695

Filename

1613695