DocumentCode
3511639
Title
Improvement of efficiency for red resonantcavity light-emitting diodes using periodic gain medium with modified electron stopped layers
Author
Lysak, V.V. ; Park, C.Y. ; Park, K.W. ; Lee, Y.T.
Author_Institution
Chonbuk Nat. Univ., Jeonju, South Korea
fYear
2010
fDate
11-14 July 2010
Firstpage
1
Lastpage
3
Abstract
The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer.
Keywords
III-V semiconductors; electro-optical devices; electron capture; indium compounds; light emitting diodes; mirrors; quantum well devices; InGaP-InGaAlP; electro-optical property; electron capture; electron stopped layer; mirror; periodic gain media; quantum wells; red resonant cavity light emitting diode; wavelength 635 nm; Cavity resonators; Light emitting diodes; Materials; Numerical models; Semiconductor process modeling; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Internet (COIN), 2010 9th International Conference on
Conference_Location
Jeju
Print_ISBN
978-1-4244-7181-2
Electronic_ISBN
978-1-4244-8221-4
Type
conf
DOI
10.1109/COIN.2010.5546680
Filename
5546680
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