DocumentCode :
3511811
Title :
Advanced process control in RTP using the "relative power"
Author :
Gutt, Thomas
Author_Institution :
Infineon Technol. AG, Munich
fYear :
2005
fDate :
4-7 Oct. 2005
Abstract :
Integrated circuits in safety critical applications like airbag or ABS have high quality requirements. During production of these chips the control of the quality must be applied down to each single process step. If the single wafer process is a RTP step the electrical power used to heat up the wafer can be tracked to monitor the system behaviour. In combination with other parameters like chamber temperature or temperature profile measurements misprocessed wafers can be detected and the fault mechanism can be concluded
Keywords :
automotive electronics; process control; rapid thermal processing; road safety; ABS; Advanced process control; Integrated circuits; RTP; airbag; chamber temperature; electrical power; fault mechanism; monitor the system behaviour; safety critical applications; single wafer process; temperature profile measurements; Air safety; Circuit faults; Cogeneration; Computerized monitoring; Electrical fault detection; Process control; Production; Temperature measurement; Vehicle safety; Wavelength measurement; APC (advanced process control); FDC (fault detection and classification); GEMISECS interface;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9223-X
Type :
conf
DOI :
10.1109/RTP.2005.1613708
Filename :
1613708
Link To Document :
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