DocumentCode
3511920
Title
Comparison and generalization of recent surface potential models for fully depleted SOI MOSFETs
Author
Niu, G.F. ; Chen, R.M.M. ; Ruan, G.
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
fYear
1996
fDate
35245
Firstpage
29
Lastpage
32
Abstract
Recent surface potential models for fully depleted SOI MOSFETs are compared. The parabolic potential approach is clarified to be a special case of the quasi-2D approach. The earlier quasi-2D model is generalized by relating the front and back surface potentials in a physically consistent way to make the model scaleable and applicable to all kinds of fully depleted SOI MOSFETs, and a unified expression of threshold voltage reduction is derived
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; surface potential; fully depleted SOI MOSFET; parabolic potential; quasi-2D model; surface potential model; threshold voltage; Boundary conditions; Capacitance; Curve fitting; Dielectric constant; Gaussian processes; MOSFET circuits; Semiconductor films; Silicon; Surface fitting; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN
0-7803-3091-9
Type
conf
DOI
10.1109/HKEDM.1996.566299
Filename
566299
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