Title :
Comparison and generalization of recent surface potential models for fully depleted SOI MOSFETs
Author :
Niu, G.F. ; Chen, R.M.M. ; Ruan, G.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
Abstract :
Recent surface potential models for fully depleted SOI MOSFETs are compared. The parabolic potential approach is clarified to be a special case of the quasi-2D approach. The earlier quasi-2D model is generalized by relating the front and back surface potentials in a physically consistent way to make the model scaleable and applicable to all kinds of fully depleted SOI MOSFETs, and a unified expression of threshold voltage reduction is derived
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; surface potential; fully depleted SOI MOSFET; parabolic potential; quasi-2D model; surface potential model; threshold voltage; Boundary conditions; Capacitance; Curve fitting; Dielectric constant; Gaussian processes; MOSFET circuits; Semiconductor films; Silicon; Surface fitting; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566299
