• DocumentCode
    3512179
  • Title

    Silicon fusion bonding for pressure sensors

  • Author

    Petersen, K. ; Barth, P. ; Poydock, J. ; Brown, J. ; Mallon, J., Jr. ; Bryzek, J.

  • Author_Institution
    NovaSensor, Fremont, CA, USA
  • fYear
    1988
  • fDate
    6-9 June 1988
  • Firstpage
    144
  • Lastpage
    147
  • Abstract
    Two novel processes for fabricating silicon piezoresistive pressure sensors are presented. The chips described are used to demonstrate an important silicon/silicon bonding technique called silicon fusion bonding (SFB). Using this technique, single-crystal silicon wafers can be reliably bonded with near-perfect interfaces without the use of intermediate layers. Pressure transducers fabricated with SFB exhibit greatly improved performance over devices made with conventional processes. SFB is also applicable to many other microchemical structures.<>
  • Keywords
    electric sensing devices; elemental semiconductors; piezoelectric transducers; pressure transducers; semiconductor technology; silicon; SFB; Si-Si bond; fusion bonding; microchemical structures; piezoresistive pressure sensors; Anisotropic magnetoresistance; Etching; Fabrication; Fusion power generation; Glass; Mechanical sensors; Micromechanical devices; Sensor fusion; Silicon; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
  • Conference_Location
    Hilton Head Island, SC, USA
  • Type

    conf

  • DOI
    10.1109/SOLSEN.1988.26462
  • Filename
    26462