DocumentCode
3512179
Title
Silicon fusion bonding for pressure sensors
Author
Petersen, K. ; Barth, P. ; Poydock, J. ; Brown, J. ; Mallon, J., Jr. ; Bryzek, J.
Author_Institution
NovaSensor, Fremont, CA, USA
fYear
1988
fDate
6-9 June 1988
Firstpage
144
Lastpage
147
Abstract
Two novel processes for fabricating silicon piezoresistive pressure sensors are presented. The chips described are used to demonstrate an important silicon/silicon bonding technique called silicon fusion bonding (SFB). Using this technique, single-crystal silicon wafers can be reliably bonded with near-perfect interfaces without the use of intermediate layers. Pressure transducers fabricated with SFB exhibit greatly improved performance over devices made with conventional processes. SFB is also applicable to many other microchemical structures.<>
Keywords
electric sensing devices; elemental semiconductors; piezoelectric transducers; pressure transducers; semiconductor technology; silicon; SFB; Si-Si bond; fusion bonding; microchemical structures; piezoresistive pressure sensors; Anisotropic magnetoresistance; Etching; Fabrication; Fusion power generation; Glass; Mechanical sensors; Micromechanical devices; Sensor fusion; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Type
conf
DOI
10.1109/SOLSEN.1988.26462
Filename
26462
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