The steady state occupancy and Effective Fermi Level of P-N junction

Explicit difference between occupation probability of the transition Gibbs free energy level (TGFEL) of semiconductor under equilibrium and that under steady state is pointed out. Our own computer simulation results are presented to show the detailed steady state occupancy of TGFELs under forward and reverse bias cases.. The result shows that Quasi Fermi levels and capture cross section of defects which is due to columbic interaction or other effects determine the different occupation probability in the region where Quasi Fermi levels are present. An Effective Fermi Level E_F^eff is defined for these two cases of the semiconductor P-N junction, with the presence of two Quasi Fermi levels.