Comparison of high-frequency application of silicon rectifiers, GaAs rectifier, and ZVT technology in a PFC boost converter

Author

Zhou, Xunwei ; Elmore, Mike ; Lee, Fred C.

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

1

fYear

1997

fDate

22-27 Jun 1997

Firstpage

8

Abstract

The use of silicon rectifiers in the continuous mode boost converter results in excessive reverse recovery currents. In order to overcome this problem, one solution is to use soft-switching techniques, such as the ZVT technology, while another solution is to use better rectifiers, namely, GaAs rectifiers. In this paper, two PFC boost converters are built to compare the benefits derived from these two solutions and to compare the performances of silicon rectifiers and the GaAs rectifier

Keywords

DC-DC power convertors; III-V semiconductors; elemental semiconductors; gallium arsenide; power factor correction; rectifying circuits; silicon; switching circuits; GaAs; GaAs rectifier; PFC boost converter; Si; Si rectifiers; ZVT technology; continuous mode boost converter; high-frequency application; reverse recovery currents; silicon rectifiers; soft-switching techniques; zero voltage transition; Circuit testing; Circuit topology; Gallium arsenide; IEC standards; Rectifiers; Silicon; Switches; Switching converters; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE

Conference_Location

St. Louis, MO

ISSN

0275-9306

Print_ISBN

0-7803-3840-5

Type

conf

DOI

10.1109/PESC.1997.616604

Filename

616604