• DocumentCode
    3512462
  • Title

    Theoretical analysis for intermediate band and tandem hybrid solar cell materials

  • Author

    Lee, Jongwon ; Dahal, Som N. ; Honsberg, Christiana B.

  • Author_Institution
    Arizona State Univ., Tempe, AZ, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    The efficiency limit of an intermediate band (IB) solar cell can be increased by a “tandem” configuration of multiple intermediate band devices. Thermodynamic models show that the efficiency of a two-stack tandem of IB devices achieves the efficiency of a six junction series connected solar cell. The efficiency of an IB in conjunction with a single or double stack tandem has similar efficiency advantages. Further, analysis of the materials which can be used to implement IB solar cells in a tandem configuration shows advantages relating to the ability to implement IB materials with quantum wells or quantum dots. For a single IB solar cell, a key difficulty is identifying materials for the barrier and the quantum well which have a small valence band offset and large conduction band offset (or the reverse). The use of an IB solar cell as the bottom solar cell of a tandem allows a larger range of materials with suitable barrier band gaps and a smaller ideal conduction band offset. A further theoretical advantage of such a structure is that it avoids the extremely low open circuit voltages achieved from pn junctions in low bandgap materials; for example, the thermodynamic optimum for a 6 junction tandem solar cell has its lowest bandgap below 0.4 eV. We present a thermodynamic model for IB hybrid tandem configurations which does not assume spectral selectivity among the different solar cells and predicts that a barrier/quantum dot structure can have an efficiency as high as 60 to 70 percent at 1000X blackbody radiation.
  • Keywords
    conduction bands; semiconductor quantum dots; semiconductor quantum wells; solar cells; thermodynamics; valence bands; 1000X blackbody radiation; IB hybrid tandem configurations; IB solar cell; barrier band gaps; barrier-quantum dot structure; double stack tandem; intermediate band; large conduction band offset; low bandgap materials; low open circuit voltages; multiple intermediate band devices; pn junctions; quantum wells; six junction series connected solar cell; small valence band offset; spectral selectivity; tandem hybrid solar cell materials; thermodynamic models; Junctions; Photonic band gap; Photovoltaic cells; Silicon; Strain; Thermodynamics; intermediate band; material; tandem; thermodynamic limit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317570
  • Filename
    6317570