Thin film transistors based on sputtered silicon and gate oxide films

Author

Jelenkovic, Emil V. ; Tong, K.Y. ; Ong, C.W.

Author_Institution

Dept. of Electron. Eng., Hong Kong Polytech. Univ., Hung Hom, Hong Kong

fYear

1996

fDate

35245

Firstpage

41

Lastpage

44

Abstract

In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250°C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model, and inclusion of argon and oxygen. Electrical properties of high temperature crystallized Si-film TFT with sputtered silicon dioxide were correlated to crystallization parameters. Such TFTs exhibit high level of electrical stability

Keywords

MOSFET; crystallisation; elemental semiconductors; paramagnetic resonance; silicon; sputtered coatings; stability; thin film transistors; transmission electron microscopy; 600 to 1250 C; ESR; Si-SiO₂; TEM; TFT; XRD; crystallization parameters; electrical properties; electrical stability; furnace crystallization; high temperature crystallized Si film; sputtered Si films; sputtered gate oxide film; structural zone model; thin film transistors; Argon; Crystallization; Furnaces; Paramagnetic resonance; Semiconductor films; Silicon compounds; Stability; Temperature distribution; Thin film transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996., IEEE Hong Kong

Print_ISBN

0-7803-3091-9

Type

conf

DOI

10.1109/HKEDM.1996.566302

Filename

566302