DocumentCode
3512662
Title
Temperature dependent Pspice model of silicon carbide power MOSFET
Author
Cui, Yutian ; Chinthavali, Madhu ; Tolbert, Leon M.
Author_Institution
Univ. of Tennessee, Knoxville, TN, USA
fYear
2012
fDate
5-9 Feb. 2012
Firstpage
1698
Lastpage
1704
Abstract
This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V / 30 A for a wide temperature range. The Pspice model was built using device parameters extracted through experiment. The static and dynamic behavior of the SiC power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The temperature dependent behavior was simulated and analyzed. Also, the effect of the parasitics of the circuit on switching behavior was simulated and discussed.
Keywords
SPICE; power MOSFET; silicon compounds; SiC; circuit parasitic effect; current 30 A; dynamic behavior; silicon carbide power MOSFET; static behavior; switching behavior; temperature-dependent Pspice model; voltage 1200 V; Integrated circuit modeling; Logic gates; Mathematical model; Power MOSFET; Resistance; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location
Orlando, FL
Print_ISBN
978-1-4577-1215-9
Electronic_ISBN
978-1-4577-1214-2
Type
conf
DOI
10.1109/APEC.2012.6166050
Filename
6166050
Link To Document