DocumentCode
3512749
Title
MEMS test structure for measuring thermal conductivity of thin films
Author
La Spina, L. ; Nenadovic, N. ; van Herwaarden, A.W. ; Schellevis, H. ; Wien, W.H.A. ; Nanver, L.K.
Author_Institution
DIMES, Delft Univ. of Technol., Netherlands
fYear
2006
fDate
6-9 March 2006
Firstpage
137
Lastpage
142
Abstract
A novel MEMS test structure and measurement procedure is presented with which the lateral thermal conductivity of thin films can be easily and accurately extracted. The extraction procedure is discussed in detail and supported by numerical simulations. Experimental examples are given for the determination of the lateral thermal conductivity of aluminium (Al), aluminium nitride (AlN), and p-doped polysilicon (polySi) thin films.
Keywords
aluminium; aluminium compounds; elemental semiconductors; micromechanical devices; silicon; thermal conductivity measurement; thin films; MEMS test structure; aluminium nitride thin films; microelectromechanical devices; p-doped polysilicon thin films; thermal conductivity measurment; Aluminum; Conducting materials; Conductivity measurement; Micromechanical devices; Resistors; Silicon; Testing; Thermal conductivity; Transistors; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN
1-4244-0167-4
Type
conf
DOI
10.1109/ICMTS.2006.1614291
Filename
1614291
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