Title :
High frequency DC-DC converter using GaN device
Author :
Delaine, Johan ; Jeannin, Pierre-Olivier ; Frey, David ; Guepratte, Kevin
Author_Institution :
Grenoble Electr. Eng. (G2Elab), Univ. Joseph FOURIER, Grenoble, France
Abstract :
This article deals with the conception of a 42V-12V isolated DC-DC converter using new GaN power transistor technology. Those components allow working at higher frequencies compare to classical silicon power components. Thus they allow increasing the power density of converters. Due to their high switching frequency, voltage and current commutation speed, they imply to take care of EMC problems, to use high frequency designed magnetic core, to adapt gate drive stage in order to increase the efficiency and to reduce power losses. This paper describes some driver and power circuit architecture to fulfill the specifications. The performance improvement of GaN device in comparison with Si device is investigated using converters.
Keywords :
DC-DC power convertors; III-V semiconductors; driver circuits; electromagnetic compatibility; gallium compounds; power transistors; switching convertors; wide band gap semiconductors; EMC; GaN; driver circuit; gate drive stage; high frequency DC-DC converter; high frequency designed magnetic core; isolated DC-DC converter; power 100 W; power circuit; power transistor technology; silicon power component; switching frequency; voltage 12 V; voltage 42 V; Gallium nitride; HEMTs; Logic gates; MODFETs; MOSFET circuits; Silicon;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6166059
