Title :
Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications
Author :
Banai, R.E. ; Lee, H. ; Lewinsohn, M. ; Motyka, M.A. ; Chandrasekharan, R. ; Podraza, N.J. ; Brownson, J.R.S. ; Horn, Mark W.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Tin sulfide (SnS) is an absorber with promising optoelectronic properties and low environmental constraints of interest for high efficiency solar cells. Sputtered SnS thin films were deposited at target powers 105-155 W and total pressures of 5 to 60 mTorr in argon. X-ray diffraction patterns confirmed a dominant tin monosulfide phase. The absorption coefficient was determined by spectroscopic ellipsometry and unpolarized spectrophotometry measurements. Both methods show that the films have absorption coefficients above the band gap in the range of 105-106 cm-1.
Keywords :
X-ray diffraction; absorption; ellipsometry; energy gap; semiconductor thin films; solar cells; sulphur compounds; tin compounds; SnS; X-ray diffraction patterns; absorption coefficient; absorption properties; band gap; environmental constraints; high efficiency solar cells; monosulfide phase; optoelectronic properties; photovoltaic applications; power 105 W to 155 W; pressure 5 mtorr to 60 mtorr; spectroscopic ellipsometry; sputtered tin sulfide thin films; unpolarized spectrophotometry measurements; Films; Microscopy; absorption; ellipsometry; photovoltaic cells; semiconductor materials; sputtering; tin compounds;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317592
