Effect of sulphur variation in AgInS2 thin films prepared by chemical spray pyrolysis

Author

Sunil, M. Anantha ; Deepa, K.G. ; Nagaraju, J.

Author_Institution

Indian Inst. of Sci., Bangalore, India

fYear

2012

fDate

3-8 June 2012

Abstract

AgInS₂ thin films are deposited by chemical spray pyrolysis technique. Aqueous solution of Silver Nitrate (AgNO₃), Indium Chloride (InCl₃), and Thiourea (CS (NH₂)₂) are used as the precursors and substrate temperature is kept at 3500C. Effect of variation in sulfur concentration was studied by varying the [S_2-]/ [In³⁺] ratio. Orthorhombic structured AgInS₂ with preferred orientation along (0 0 2) plane is identified using XRD. Even though the crystallinity decreased with increase in sulfur concentration, Ag₂O₃ phase which was observed in the sulfur poor sample was found to be disappeared for higher Sulfur concentration. EDAX data revealed nearly stoichiometric films for [S_2-]/ [In³⁺] ratio 5, with atomic percentage of 26.69, 23.80, 49.81 for Ag, In, S respectively. SEM images show a gradual change from non-spherical to spherical grains with increase in sulfur concentration. Band gap measured was in the range 1.85 to 2.03 eV.

Keywords

X-ray chemical analysis; X-ray diffraction; energy gap; indium compounds; scanning electron microscopy; semiconductor growth; semiconductor thin films; silver compounds; spray coating techniques; stoichiometry; ternary semiconductors; AgInS₂; EDAX data; SEM images; XRD; aqueous solution; band gap; chemical spray pyrolysis technique; electron volt energy 1.85 eV to 2.03 eV; indium chloride; nonspherical phase; orthorhombic structure; silver nitrate; spherical grains; stoichiometric films; substrate temperature; sulfur concentration; sulphur variation effect; temperature 3500 degC; thin film deposition; thin film preparation; thiourea; Chemicals; Films; Indium; Photonic band gap; Photovoltaic cells; Silver; Substrates; Absorber layer; AgInS2; Chemical spray pyrolysis; Morphology; Optical properties; Orthorhombic structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317594

Filename

6317594