Coupled modeling of evolution of impurity/defect distribution and cell performance

We demonstrate the use of end-to-end predictive modeling to optimize silicon solar cell fabrication processes. Coupled continuum models for dopants, metals, and light elements (e.g., O) are used to predict the distribution of electronically active defects. The models include point defect-mediated diffusion of boron and phosphorus from solid sources at both the emitter and back surface field. Interactions between metals and boron, boron and oxygen, dopants and point defects, and metals and dopant-defect complexes are modeled. The resulting impurity and defect distributions along with associated trap levels and capture cross-sections are passed to device simulation. The modeling results suggest strategies to optimize device performance in the presence of contamination.