DocumentCode :
3513494
Title :
Modeling the size distribution of iron silicide precipitates in multicrystalline silicon
Author :
Schön, Jonas ; Haarahiltunen, Antti ; Fenning, David P. ; Buonassisi, Tonio ; Savin, Hele ; Warta, Wilhelm ; Schubert, Martin C.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst. (ISE), Freiburg, Germany
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is investigated with an advanced model that has been previously demonstrated to be able to simulate the iron distribution in two dimensions. The improving detection limits of precipitate measurements with x-ray fluorescence microscopy (μ XRF) allow a first comparison of measured and simulated precipitate densities in mc solar cell material. We focused on simulating the size distribution of iron-silicide precipitates at a grain boundary for a better comparison with experimental data. The simulated line densities of detectable iron precipitates as well as the size distribution along a grain boundary are in good agreement with experiments. These results verify the iron kinetics model, independent of the interstitial iron concentration. The dependency of the assumed total iron concentration and the model structure is investigated by varying these input parameters. The model predicts a fast dissolution of small and medium iron precipitates during inline phosphorus diffusion, resulting in an increase of the mean size of precipitates. Low-temperature anneals effectively reduce the interstitial iron concentration, but influence only the density of small precipitates, which are below experimental detection limits. The simulations demonstrate that iron precipitates become more important for the charge-carrier lifetime during solar cell processing.
Keywords :
X-ray emission spectra; X-ray fluorescence analysis; annealing; density; diffusion; dissolving; elemental semiconductors; grain boundaries; interstitials; precipitation; silicon; μXRF; FeSi; Si; X-ray fluorescence microscopy; annealing; charge-carrier lifetime; densities; dissolution; grain boundary; inline phosphorus diffusion; interstitial iron concentration; iron kinetics model; iron silicide precipitates; multicrystalline silicon; precipitation; size distribution; solar cell processing; Atomic measurements; Density measurement; Grain boundaries; Iron; Photovoltaic cells; Silicon; Temperature measurement; impurities; modeling; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317621
Filename :
6317621
Link To Document :
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