Title :
A comparison of ∂-doped quantum well structures for power FET applications
Author :
Roberts, J.M. ; Harris, J.J. ; Hopkinson, M. ; Roberts, C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation
Keywords :
III-V semiconductors; aluminium compounds; carrier density; carrier mobility; doping profiles; gallium arsenide; indium compounds; microwave field effect transistors; microwave generation; microwave power transistors; power field effect transistors; semiconductor quantum wells; GaAs/AlGaAs; GaAs:Si-AlGaAs:Si; InGaAs/InP; InGaAs:Si-InP:Si; QW structures; Si ∂-doping plane position; delta-doped quantum well structures; design rules; high carrier concentration; high frequency power FET; high mobility structures; material composition; microwave generation; power FET applications; transport properties; Capacitive sensors; Digital alloys; Doping; Electron mobility; FETs; Impurities; Lattices; Particle scattering; Semiconductor process modeling; X-ray scattering;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566308
