• DocumentCode
    3513819
  • Title

    Novel Ga0.47In0.53As metal-semiconductor-metal photodetectors grown by metalorganic vapor phase epitaxy

  • Author

    Chan, P.T. ; Choy, H.S. ; Shu, C. ; Hsu, C.C.

  • Author_Institution
    Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
  • fYear
    1996
  • fDate
    35245
  • Firstpage
    56
  • Lastpage
    59
  • Abstract
    InP-Ga0.47In0.53As-InP metal-semiconductor-metal photodetectors grown with an additional barrier enhancement layer of Al0.1In0.9P exhibited a reduction of leakage current and an increase in breakdown voltage. The devices had a DC responsivity of 0.32 A/W and an intrinsic response faster than 74 ps at 1.3 μm
  • Keywords
    III-V semiconductors; Schottky barriers; electric breakdown; gallium arsenide; indium compounds; leakage currents; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor growth; semiconductor-metal boundaries; vapour phase epitaxial growth; 1.3 micron; 74 ps; Al0.1In0.9P; InP-Ga0.47In0.53As-InP; MOVPE growth; MSM photodetectors; barrier enhancement layer; breakdown voltage; leakage current reduction; metal-semiconductor-metal photodetectors; metalorganic vapor phase epitaxy; Detectors; Electrodes; Epitaxial growth; Gold; Indium phosphide; Leakage current; Optical saturation; Photodetectors; Schottky barriers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996., IEEE Hong Kong
  • Print_ISBN
    0-7803-3091-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1996.566309
  • Filename
    566309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3513819