DocumentCode
3514118
Title
1kW S-band Solid State radar amplifier
Author
Kwack, Ju-Young ; Kim, Ki-Won ; Cho, Samuel
Author_Institution
RFHIC Corp., Suwon, South Korea
fYear
2011
fDate
18-19 April 2011
Firstpage
1
Lastpage
4
Abstract
A GaN based highly integrated Solid State Power Amplifier (SSPA) is developed for S-band radar applications. The power amplifier delivers more than 1 KW within a 400 MHz bandwidth with 55 dB gain and a typical 34% PAE. The SSPA includes a negative voltage supply, sequential bias circuit, and temperature sensor circuit. Its compact and lightweight design is suitable for many radar applications.
Keywords
III-V semiconductors; gallium compounds; microwave amplifiers; power amplifiers; radar applications; wide band gap semiconductors; GaN; PAE; S-band solid state radar amplifier; SSPA; bandwidth 400 MHz; efficiency 34 percent; frequency 2900 MHz to 3300 MHz; gain 55 dB; power 1 kW; power amplifier; temperature sensor circuit; Gallium nitride; HEMTs; Performance evaluation; Radar; Radio frequency; Silicon carbide; Solids; GaN; Power Amplifier; Radar;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location
Clearwater Beach, FL
Print_ISBN
978-1-61284-081-9
Type
conf
DOI
10.1109/WAMICON.2011.5872866
Filename
5872866
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