Title :
Real time analysis of ultra-thin CIGS thin film deposition
Author :
Ranjan, Vikash ; Aryal, Krishna ; Little, Scott ; Erkaya, Yunus ; Rajan, Grace ; Boland, Patrick ; Attygalle, Dinesh ; Aryal, Puruswottam ; Pradhan, Puja ; Collins, Robert W. ; Marsillac, Sylvain
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
Abstract :
Thin films of Cu(In,Ga)Se2 with various copper contents as functions of the copper and gallium contents were deposited by co-evaporation onto thermally oxidized silicon wafer (100). In-situ Real Time Spectroscopic Ellipsometry (RTSE) is used to understand the effect of the Ga/(In+Ga) ratio and the Cu atomic % on the growth and optical properties of ultra -thin CIGS films. We have demonstrated that RTSE can be used effectively to identify the growth process and to distinguish the effects of copper from those of gallium on the surface roughness evolution and dielectric functions.
Keywords :
copper compounds; dielectric function; ellipsometry; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; vacuum deposition; CIGS; co-evaporation; copper content; dielectric function; gallium content; growth process; in-situ real time spectroscopic ellipsometry; real time analysis; surface roughness evolution; thermally oxidized silicon wafer (100); ultra-thin CIGS thin film deposition; Atomic layer deposition; Gallium; Indium; Photovoltaic systems; Time measurement; ellipsometry; gallium-based semiconductor materials; optical variables measurement; photovoltaic cells; semiconductor film; thickness measurement;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317655
