• DocumentCode
    3514161
  • Title

    Study of n-channel MOSFETs with an enclosed-gate layout in a 0.18 micron CMOS technology

  • Author

    Chen, Li ; Gingrich, Douglas M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., South Dakota Sch. of Mines & Technol., Rapid City, SD, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    16-22 Oct. 2004
  • Firstpage
    1344
  • Abstract
    Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 micron CMOS technology. The static, signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.
  • Keywords
    CMOS integrated circuits; MOSFET; ionisation chambers; 0.18 mum; CMOS technology; enclosed-gate layout; guard rings; ionizing radiation; low-noise radiation-tolerant circuits; n-channel MOSFET; transistor design; CMOS process; CMOS technology; Geometry; Integrated circuit noise; Integrated circuit technology; Ionizing radiation; Leakage current; MOSFETs; Semiconductor device manufacture; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2004 IEEE
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-8700-7
  • Electronic_ISBN
    1082-3654
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2004.1462447
  • Filename
    1462447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3514161