On the physical mechanism contributing to the difference between drain and source resistances in short-channel MOSFETs

Device simulations with MEDICI are carried out to study the physical mechanisms underlying the difference between the drain and source series resistances (R_d-R_s) in MOSFETs. Our results show that the magnitude of (R_d-R_s) is mainly due to differences in the drain and source contact resistance, not to misalignment of the gate with respect to source and drain, nor to differences in source and drain doping densities