DocumentCode :
3514213
Title :
Toward a 3D model of Differential Electric-Field Sensitive Field Effect Transistor (DeFET)
Author :
Ibrahim, Mohamed F. ; Ghalab, Yehya H. ; Badawy, Wael
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB
fYear :
2008
fDate :
15-15 Oct. 2008
Firstpage :
141
Lastpage :
144
Abstract :
This paper presents a 3D model for a differential electric-field sensitive field effect transistor (DeFET), which is a new CMOS electric-field sensor. The DeFET is used to detect very small partials especially for environmental purposes. This paper also describes the DeFETpsilas theory of operation in addition to simulation results that confirm the DeFETpsilas theory of operation.
Keywords :
CMOS integrated circuits; electric sensing devices; field effect transistors; 3D model; CMOS electric-field sensor; DeFET; differential electric-field sensitive field effect; Biosensors; Chemical technology; DNA; Equivalent circuits; FETs; Lab-on-a-chip; Nonuniform electric fields; Physics; Semiconductor device modeling; Voltage; 3D Model; DeFET; electrode; micro; sensing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems and Nanoelectronics Research Conference, 2008. MNRC 2008. 1st
Conference_Location :
Ottawa, Ont.
Print_ISBN :
978-1-4244-2920-2
Electronic_ISBN :
978-1-4244-2921-9
Type :
conf
DOI :
10.1109/MNRC.2008.4683398
Filename :
4683398
Link To Document :
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