Power-density development of a 5MHz-switching DC-DC converter

Author

Matsuura, Ken ; Yanagi, Hiroshige ; Tomioka, Satoshi ; Ninomiya, Tamotsu

Author_Institution

Adv. Dev. Dept., TDK-Lambda Corp., Nagaoka, Japan

fYear

2012

fDate

5-9 Feb. 2012

Firstpage

2326

Lastpage

2332

Abstract

This paper presents the power-density development of a high-frequency isolated DC-DC converter for ICT equipments. This technique results in a prototype of a 5MHz DC-DC converter module. In order to realize a prototype of the high-frequency isolated DC-DC converter, its topology is selected to be a half-bridge type current-mode resonant converter, and switching power devices of GaN-FET and Si-SBD and the transformer composed of a nickel-zinc ferrite core are utilized. As a result, a 5MHz isolated DC-DC converter with the input/output voltages of 48V/12V and the power rating of 120W has been fabricated, and the high power-density of 14W/cm³ has been performed.

Keywords

DC-DC power convertors; III-V semiconductors; elemental semiconductors; gallium compounds; power field effect transistors; silicon; switching convertors; wide band gap semiconductors; FET; GaN; ICT equipments; frequency 5 MHz; half-bridge type current-mode resonant converter; high-frequency isolated DC-DC converter; power 120 W; power-density development; switching DC-DC converter; switching power devices; voltage 12 V; voltage 48 V; Capacitance; Capacitors; FETs; Ferrites; Inductance; Logic gates; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4577-1215-9

Electronic_ISBN

978-1-4577-1214-2

Type

conf

DOI

10.1109/APEC.2012.6166147

Filename

6166147