Title :
A model for MOS failure prediction due to hot-carriers injection
Author :
Wong, Waisum ; Icel, Ali ; Liou, J.J.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection which causes the MOS to degrade. Many previous works have shown that the degradation is strongly related to the device substrate current. This paper develops a simple substrate current model and a comprehensive failure prediction model to predict the MOS lifetime as a function of channel length and applied drain voltage. Therefore, the transistor lifetime for different MOS geometries under various drain voltages can easily be determined. This model is useful for determining the channel length that will provide 10-20 years DC lifetime for the MOS technologies where current lifetime for the minimum channel length is much less than 10 years
Keywords :
MOSFET; failure analysis; hot carriers; semiconductor device models; semiconductor device reliability; 10 to 20 y; MOS failure prediction; MOS lifetime; applied drain voltage; channel length; device lifetime; device substrate current; failure prediction model; hot-carriers injection; submicron MOS technologies; substrate current model; transistor lifetime; Channel hot electron injection; Charge carrier processes; Degradation; Drain avalanche hot carrier injection; Hot carrier injection; Hot carriers; Impact ionization; MOSFET circuits; Predictive models; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566313
