DocumentCode :
3514620
Title :
Dielectric properties of stabilized barium titanate films
Author :
Kim, Sang- Jin ; Kim, Ki- Joon ; Seong, Nak-Jin ; Lee, Joon-Ung ; Korobova, N. ; Park, S.
Author_Institution :
Dept. of Eng., Junior Coll. of Inchon, South Korea
Volume :
2
fYear :
1997
fDate :
25 -30 May 1997
Firstpage :
1010
Abstract :
Barium titanate, because of its exceptionally high dielectric constant, has been used extensively as a capacitor material. It, however, possesses two undesirable characteristics, namely decreased insulation resistance (degradation) under high dc voltage stresses at temperatures in excess of the Curie point of 120 [°C] and a high-temperature coefficient of capacitance near the Curie point. In the present investigation improvement in life-time were achieved by the incorporation of lanthanum oxide into barium titanate. Films of composition 99 mole % BaTiO3 and 0.3 mole % La2O 3 were prepared by the sol-gel method using metal alkoxides, and tested for high-temperature stability. It was found that the resistance of barium titanate to the degradation of dielectric properties can be improved by the incorporation of small quantities (0.1~0.5 mole %) of La2O3. A survey of dielectric properties for compositions forming lanthanum-barium titanate solid solutions indicated that the, temperature coefficient of capacitance and dissipation factor can be reduced to quite low values for certain compositions along the join BaTiO3-La2O3. The compositions containing 0.3 mole % La2O3 exhibit the most satisfactory dielectric properties but abbreviated lifetimes
Keywords :
Curie temperature; barium compounds; ceramic capacitors; dielectric materials; lanthanum compounds; permittivity; sol-gel processing; 120 degC; BaTiO3-La2O3; Curie point; capacitor material; dc voltage stresses; dielectric constant; dielectric properties; dissipation factor; high-temperature stability; insulation resistance; sol-gel method; temperature coefficient of capacitance; Barium; Capacitance; Capacitors; Degradation; Dielectric materials; Dielectrics and electrical insulation; High-K gate dielectrics; Temperature; Titanium compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
Type :
conf
DOI :
10.1109/ICPADM.1997.616616
Filename :
616616
Link To Document :
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