DocumentCode :
3514623
Title :
Thermal analysis and validation of packaging for 100W and higher GaN MMIC power amplifiers
Author :
Harris, Mike ; Wagner, Brent ; Tong, Wusheng ; Menkara, Hisham ; Halpern, Stan
Author_Institution :
Electro-Opt. Syst. Lab., Georgia Tech Res. Inst., Atlanta, GA, USA
fYear :
2011
fDate :
18-19 April 2011
Firstpage :
1
Lastpage :
5
Abstract :
We have developed a thermal analysis methodology, packaging design process and validation procedure demonstrating that GaN power amplifiers, having greater than 100W of RF output power, can be managed thermally in practical higher level assemblies. Microscopic and macroscopic models were used to evaluate performance. Novel thermal dissipation test structures were designed, fabricated and measured at dissipation densities of greater than 15,000W/cm2 of active area.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; performance evaluation; thermal analysis; thermal management (packaging); wide band gap semiconductors; GaN; MMIC power amplifiers; macroscopic models; microscopic models; packaging design process; performance evaluation; power 100 W; thermal analysis; thermal dissipation test structures; Gallium nitride; Logic gates; MMICs; Microscopy; Thermal analysis; Thermal conductivity; Thermal management; AESAs; GaN; LRUs; MMICs; Power Amplifiers; thermal analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location :
Clearwater Beach, FL
Print_ISBN :
978-1-61284-081-9
Type :
conf
DOI :
10.1109/WAMICON.2011.5872896
Filename :
5872896
Link To Document :
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