Title :
Quantum engineering of nanoelectronic devices
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The performance evaluation and characterization of nano-meter scale devices is shown to be considerably affected by the presence of quantum waves that transform the energy character of an electron from classical (analog) to quantum (digital). A presence of high electric field makes familiar Ohm´s law invalid, necessitating the use of velocity saturation effects that limit the electron velocity in nano-devices to thermal velocity or Fermi velocity depending on the degeneracy of the sample. The novel concepts behind quantum-engineered nanostructures are reviewed
Keywords :
quantum interference devices; Fermi velocity; degeneracy; electron velocity; high-field nonOhmic transport; nanoelectronic device; quantum engineering; quantum wave; thermal velocity; velocity saturation; Application software; Consumer electronics; Electrons; Gallium arsenide; High speed optical techniques; Nanoscale devices; Optical materials; Optical saturation; Optical superlattices; Photonic band gap;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840526