Title :
Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays
Author :
Nathan, A. ; Murthy, R.V.R. ; Ma, Q. ; Park, B. ; Pham, H. ; Sazonov, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
This paper will review amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability will be presented along with optimization of materials and processing conditions for reduced VT-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (<100°C) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, will also be discussed along with preliminary results
Keywords :
X-ray detection; X-ray imaging; amorphous semiconductors; elemental semiconductors; silicon; silicon radiation detectors; thin film transistors; 100 C; Si; amorphous silicon detector; fabrication; flexible polymer substrate; large area X-ray imaging; leakage current; pixel integration; stability; thin film transistor; threshold voltage; Amorphous silicon; Leakage current; Optical detectors; Optical device fabrication; Optical imaging; Optical materials; Polymer films; Stability; Temperature; Thin film transistors;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840533
