Title :
Front-end electronics for high rate neutron counters: its performance and radiation hardness improvement
Author :
Lee, Tae Hoon ; Kim, Ho Dong ; Park, Seong Won
Author_Institution :
Korea Atomic Energy Res. Inst., Daejeon, South Korea
Abstract :
Radiation-resistant circuits focused on the radiation hardness process have been developed for many years to protect them from radiation damage. In general, radiation hardened transistors are very expensive and sometimes not easy to acquire. In this study, we designed front-end electronics for high rate neutron counters. An aim of our study was to improve their radiation hardness by using commercial fast bipolar transistors not specifically processed for radiation resistance. This circuit includes a preamplifier, a comparator, and a monostable multivibrator. The preamplifier circuit is a kind of current-sensitive configuration. The TTL pulse width of the multivibrator output is 40 ns. This short TTL pulse width makes it possible to count high rate neutrons of over 5 MHz. For radiation hardness improvement experiments, the transistors were categorized into two groups: general purpose and high speed transistors. After a 100 Mrad irradiation from a Co-60 gamma-ray source, the reduction of the current gain of the general purpose transistors (KN3904 and KN3906) was over 80% and for the fast transistors (KTC9018 and KTC2347) the current gain reduction was within 68%. The signal to noise ratio of the preamplifier output voltage was reduced by 66% for the general purpose transistor (KN3904) and within 36% for the high speed ones.
Keywords :
bipolar transistors; comparators (circuits); counters; electron device noise; gamma-ray effects; multivibrators; neutron detection; nuclear electronics; preamplifiers; radiation hardening (electronics); Co-60 gamma-ray source; TTL pulse width; comparator; current gain reduction; current-sensitive configuration; fast bipolar transistors; front-end electronics; general purpose transistors; high rate neutron counters; high speed transistors; irradiation; monostable multivibrator; multivibrator output; preamplifier circuit; preamplifier output voltage; radiation damage; radiation hardened transistors; radiation hardness improvement; radiation hardness process; radiation resistance; radiation-resistant circuits; signal-noise ratio; Bipolar transistors; Circuits; Neutrons; Preamplifiers; Protection; Radiation detectors; Radiation hardening; Signal to noise ratio; Space vector pulse width modulation; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1462507